Tieftemperaturverhalten von Motorenölen = Low temperature comportment of motor-oilsErdöl, Erdgas, Kohle. 1992, Vol 108, Num 5, issn 0179-3187, 241 p.Article

WOLTE 3 European Workshop on Low Temperature ElectronicsBROGIATO, Luciana; CAMIN, Daniel V; PESSINA, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, issn 1155-4339, 331 p.Conference Proceedings

Life test evaluation of 411M cathode for highly reliable satellite TWTsCHIBA, A; AKIYAMA, Y.Applied surface science. 1999, Vol 146, Num 1-4, pp 120-125, issn 0169-4332Conference Paper

Choosing proper approximation for semiconductor device analytical modeling at low temperatureMNATSAKANOV, T. T; POMORTSEVA, L. I; SCHRÖDER, D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.71-Pr3.74, issn 1155-4339Conference Paper

Low-temperature properties of triglyceride-based diesel fuels : transesterified methyl esters and petroleum middle distillate/ester blendsDUNN, R. O; BAGBY, M. O.Journal of the American Oil Chemists' Society. 1995, Vol 72, Num 8, pp 895-904, issn 0003-021XArticle

Analysis and simulation of the current gain of polysilicon emitter bipolar transistors for low-temperature operationLIU XING HUANG; TONG LI WEI; JIANG ZHENG et al.International journal of electronics. 1996, Vol 80, Num 1, pp 21-33, issn 0020-7217Article

Cryogenic amplification system for ultra-low noise measurementsLOMBARDI, G; MACUCCI, M; GIANNETTI, R et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.185-Pr3.188, issn 1155-4339Conference Paper

Perfluorkautschuk erweitert den Einsatzbereich elastischer Dichtungen = Perfluoroelastomer enlarges the use field of elasticRICHTER, B.Verfahrenstechnik (Mainz. 1983). 1995, Vol 29, Num 9, pp 45-46, issn 0175-5315Article

Fast and efficient procedures for determining the microwave noise parameters of HEMT's at decreasing temperaturesCADDEMI, A; DI PAOLA, A; SANNINO, M et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.135-Pr3.138, issn 1155-4339Conference Paper

Optimieren des Mischungsaufbaus von Polychloropren für bestes Tieftemperaturverhalten = Optimizing compound composition of CR for low temperature behaviourSTEINHOFF, W.Kautschuk und Gummi, Kunststoffe. 1997, Vol 50, Num 6, pp 442-450, issn 0022-9520Article

Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devicesCHENG, M.-C.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.67-Pr3.70, issn 1155-4339Conference Paper

Some peculiarities of low temperature conductivity of silicon diodesSHWARTS, Y. M; SMERTENKO, P. S; SOKOLOV, V. N et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.75-Pr3.78, issn 1155-4339Conference Paper

Ice formation in isolated human hepatocytes and human liver tissueBISCHOF, J. C; RYAN, C. M; TOMPKINS, R. G et al.ASAIO journal (1992). 1997, Vol 43, Num 4, pp 271-278, issn 1058-2916Article

Shear crack propagation in a nickel base metallic glass = Scherrissausbreitung in einem Metallglas auf NickelbasisALPAS, A.T; EDWARDS, L; REID, C.N et al.Acta metallurgica. 1987, Vol 35, Num 3, pp 287-796, issn 0001-6160Article

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Development of cryogenic Ge JFETsWARD, R. R; KIRSCHMAN, R. K; JHABVALA et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.123-Pr3.126, issn 1155-4339Conference Paper

Advances in discrete GaAs JFETs and simple amplifiers for deep cryogenic readoutsCUNNINGHAM, T. J; FITZSIMMONS, M.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.127-Pr3.130, issn 1155-4339Conference Paper

I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperatureROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.21-Pr3.24, issn 1155-4339Conference Paper

Anelastic phenomena at very low temperatures in relation in point defect-dislocation interactions, in electron irradiated magnesium = Phénomènes anélastiques à faibles températures en fonction des interactions d'échange des dislocations et des défauts ponctuels dans le magnésium soumis à une irradiation électronique = Anelastische Phaenomene bei niedrigen Temperaturen im Verhaeltnis zu Punktfehler-Versetzungs-Wechselwirkungen in elektronenbestrahlten MagnesiumLAUZIER, J; HILLAIRET, J; FANTOZZI, G et al.Acta metallurgica. 1987, Vol 35, Num 7, pp 1589-1595, issn 0001-6160Article

Extraction of collector-base resistance of UHV/CVD SiGe HBTs operating at low temperaturesGOGINENI, U; NIU, G; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.95-Pr3.98, issn 1155-4339Conference Paper

Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channelFRANTSUZOV, A. A; KHARIN, A. V.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.41-Pr3.44, issn 1155-4339Conference Paper

Low noise amplifier for an integrated SQUID electronics operating in liquid nitrogenKUNERT, J; ZAKOSARENKO, V; SCHULTZE, V et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.205-Pr3.208, issn 1155-4339Conference Paper

Single-electron tunnelling transistor in SiGe/Si double-barrier structuresLEE, C.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A115-A118, issn 0268-1242Conference Paper

Detection of nuclear radiation by a Josephson tunnel junction with trapped Abrikosov vorticesGUBANKOV, V. N; LAPITSKAIA, I. L; LISITSKII, M. P et al.Proceedings of the International Cryogenic Engineering Conference. 1994, Vol 34, pp 903-906, issn 0308-5422Conference Paper

Features of indirect-band-to-band tunneling in an insulated-gate lateral pn junction device on a SIMOX substrate with an ultrathin 10-nm-thick silicon layerOMURA, Y.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.63-Pr3.66, issn 1155-4339Conference Paper